Features necessary to implement full-bridge topology. Factor, High-Density Power Converters power converters using either current mode. • High-Voltage. Integrated Circuits (ICs) – PMIC - Full, Half-Bridge Drivers are in stock at DigiKey. Integrated Circuits (ICs) ship same day. Power MOSFET.

The PWD13F60 is a high density power driver integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have a low RDS(on) of 320 mΩ and 600 V drain-source breakdown voltage, while the embedded gate drivers high-side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows loads in a tiny space to be driven efficiently. The PWD13F60 accepts a supply voltage (VCC) extending over a wide range and is protected by a low voltage UVLO detection on the supply voltage. The input pin extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The EVALPWD13F60 is 48 x 53 mm wide, FR-4 PCB resulting in an Rth(J-A) of 18 °C/W, capable to drive loads up to 2 ARMS, without forced airflow cooling.

Both controlling and power signals are available on pin strip for easy connection to customer's board. Autodesk sketchbook pro 7 portable. Key Features • Power system-in-package integrating gate drivers and high-voltage power MOSFETs: Low RDS(on) = 320 mΩ, BVDSS = 600V • Suitable for operating as: Full-bridge or Dual independent half-bridges • Wide input supply voltage down to 6.5 VUVLO protection on supply voltage • 3.3 V to 15 V compatible inputs with hysteresis and pull-down • Interlocking function to prevent cross conduction • Internal bootstrap diodes.

The MLX83100 is a two-phase pre-driver (also called bridge driver or gate driver) IC with integrated current sense amplifier. This device is used to drive brushed DC motors in combination with a microcontroller and four discrete power N-FETs. This device is able to control four external N-FETs for full H-bridge control in the supply range from 4.5 volt to 28 volt, by means of the integrated charge pump. The high side gate drivers are supplied via bootstrap circuits.

The trickle charge pump allows 100% pulse width modulation (PWM) operation despite the use of bootstrap capacitors. The bootstrap voltage regulator is optimized for gate charges up to 500 nC per FET at 20 kHz PWM.

Our MLX83100 pre-driver comprises various monitoring and protection functions, including undervoltage and overvoltage detection at multiple internal voltage nodes, over temperature detection, and drain-source and gate-source voltage monitoring of the external N-FETs. In case of fault detection, the serial ICOM diagnostics interface will inform the microcontroller with a PWM signal, where the duty cycle indicates the nature of the error.

An integrated fast, high-bandwidth, low offset current sense amplifier allows for precise torque control, with programmable gain selection. The MLX83100 provides an EEPROM for configurability, avoiding the need for a high pin-count package. The configuration allows the customer to optimize the pre-driver’s operation for different applications. For brushless (BL)DC applications see also the of the same pre-driver family. For sensorless BLDC applications see also our embedded-MCU BLDC controllers MLX812xx family.